Paper Title:
Interface Dynamics of Melt Instabilities on Semiconductor Surface
  Abstract

At uniform excitation of semiconductors by laser radiation with pre-threshold power, locally melted regions are formed on irradiated surfaces. This is induced by thermo diffusive instability of a distribution of uniformly generated electron-hole plasma. The shapes of locally melted regions give rise to a great variety of interesting surface patterns. A mathematical model of the surface dynamics, when the instability of the melt front arises along a chosen wave vector, is proposed. The results of computer simulation of interface dynamics of solitary melted region are compared with experimental data.

  Info
Periodical
Solid State Phenomena (Volume 129)
Edited by
R. Kozubski, G.E. Murch and P. Zięba
Pages
137-143
DOI
10.4028/www.scientific.net/SSP.129.137
Citation
B. Datsko, V. Meleshko, Z. Świątek, I. Mohylyak, L. Lityńska-Dobrzyńska, P. Zięba, "Interface Dynamics of Melt Instabilities on Semiconductor Surface ", Solid State Phenomena, Vol. 129, pp. 137-143, 2007
Online since
November 2007
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Price
$32.00
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