Paper Title:
The Structure Studies on Si-N Thin Layers
  Abstract

In structure studies performed using the Grazing Incident X-ray Diffraction Geometry (GIXD) for different incident angles it was indicated that the Si-N layers are non-homogenous and their structure depends on the penetration depth. The layers close to substrate (α = 2, 1°) show the presence of the Si3N4, SiO2, SiO2, SiC phases and an amorphous Si-N phase as well. The layers near the surface (α = 0.5; 0.25; 0.15°) are poorer in Si-N phases. There are only observed the presence of the Si3N4 and SiO2 phases. The obtained results confirm the non-homogenity of layers.

  Info
Periodical
Solid State Phenomena (Volume 130)
Edited by
Danuta Stróż & Małgorzata Karolus
Pages
287-292
DOI
10.4028/www.scientific.net/SSP.130.287
Citation
M. Karolus, E. Łągiewka, "The Structure Studies on Si-N Thin Layers", Solid State Phenomena, Vol. 130, pp. 287-292, 2007
Online since
December 2007
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