Paper Title:
The Reflectometry Studies on SiC and SiN Thin Layers
  Abstract

The X-ray reflectivity measurements were used for the analyses of the SiC and SiN thin layers. Density, roughness and the thickness were determined for searching materials. The calculations and simulations were carried out using the WinGixa software. The obtained results show that the studied layers are non-homogenous and there are consist of “sub-layers” rich in Si-C, Si-N, SI-O phases. Moreover, the presence of the main amorphous phase was observed in all searching samples.

  Info
Periodical
Solid State Phenomena (Volume 130)
Edited by
Danuta Stróż & Małgorzata Karolus
Pages
293-296
DOI
10.4028/www.scientific.net/SSP.130.293
Citation
M. Karolus, B. Bierska-Piech, E. Łągiewka, "The Reflectometry Studies on SiC and SiN Thin Layers ", Solid State Phenomena, Vol. 130, pp. 293-296, 2007
Online since
December 2007
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Price
$32.00
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