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Gettering and Defect Engineering in Semiconductor Technology XII

Solid State Phenomena Volumes 131 - 133

• Papers
• Abstracts

• p1 Casting Single Crystal Silicon: Novel Defect Profiles from BP Solar's Mono^{2 TM} Wafers   [ 729 K ]
  Authors: Nathan Stoddard, Bei Wu, Ian Witting, Magnus C. Wagener, Yongkook Park, George A. Rozgonyi, Roger Clark
• p9 Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon   [ 1 M ]
  Authors: J. Chen, Takashi Sekiguchi, S. Ito, De Ren Yang
• p15 Impact of Iron and Molybdenum in Mono and Multicrystalline Float-Zone Silicon Solar Cells   [ 745 K ]
  Authors: Gianluca Coletti, L.J. Geerligs, P. Manshanden, C. Swanson, Stephan Riepe, Wilhelm Warta, J. Arumughan, R. Kopecek
• p21 Divacancy Induced Improvement for Stabilization of Silicon Conductivity versus Temperature   [ 166 K ]
  Authors: G.N. Kamaev, M.D. Efremov, V.A. Stuchinsky, B.I. Mihailov, S.G. Kurkin
• p27 Mechanism of Shunting of Nanocrystalline Silicon Solar Cells Deposited on Rough Ag/ZnO Substrates   [ 24 M ]
  Authors: Hongbo Li, Ronald Franken, Robert L. Stolk, Jatindra K. Rath, Ruud E.I. Schropp
• p33 Advances in Structural Characterization of Thin Film Nanocrystalline Silicon for Photovoltaic Applications   [ 1 M ]
  Authors: Alessia Le Donne, Simona Binetti, Giovanni Isella, Bernard Pichaud, Michael Texier, Maurizio Acciarri, Sergio Pizzini
• p39 Origination and Properties of Dislocations in Thin Film Nitrides   [ 1 M ]
  Authors: Horst P. Strunk
• p47 Metal In-Diffusion during Fe and Co-Germanidation of Germanium   [ 213 K ]
  Authors: Eddy Simoen, K. Opsomer, C. Claeys, Karen Maex, C. Detavernier, R.L. Van Meirhaeghe, Paul Clauws
• p53 Investigation of 4H-SiC Layers Implanted by Al Ions   [ 24 M ]
  Authors: E.V. Kolesnikova, Evgenia V. Kalinina, A.A. Sitnikova, M.V. Zamoryanskaya, T.P. Popova
• p59 Interstitial Carbon-Related Defects in Si_1-xGe_x Alloys   [ 198 K ]
  Authors: L.I. Khirunenko, Yu.V. Pomozov, M.G. Sosnin, A. Duvanskii, Vitor J.B. Torres, J. Coutinho, R. Jones, Patrick R. Briddon, N.V. Abrosimov, H. Riemann
• p65 Effect of Various Treatments on Light Emission Properties of Si-Rich-SiO_x Structures   [ 131 K ]
  Authors: M. Baran, N. Korsunska, L. Khomenkova, T. Stara, V. Khomenkov, Y. Goldstein, E. Savir, J. Jedrzejewski
• p71 Size Dependent Photoluminescence of Si Nano-Crystals Embedded in Amorphous Silicon   [ 155 K ]
  Authors: A.L. Quintos Vasques, T.V. Torchynska, G. Polupan, Y. Matsumoto, L. Khomenkova, L.V. Shcherbyna
• p77 Very First Relaxation Steps in Low Temperature Buffer Layers SiGe/Si Heterostructures Studied by X-Ray Topography   [ 2 M ]
  Authors: Nelly Burle, Bernard Pichaud, V.I. Vdovin, M.M. Rzaev
• p83 Passivation of Si and SiGe/Si Structures with 1-Octadecene Monolayers   [ 285 K ]
  Authors: I.V. Antonova, M.B. Gulyaev, R.A. Soots, V.A. Seleznev, V.Ya. Prinz
• p89 Configuration of DV Complexes In Ge: Positron Probing of Ion Cores   [ 183 K ]
  Authors: N.Yu. Arutyunov, Valentin V. Emtsev, E. Sayed, Reinhard Krause-Rehberg