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Casting Single Crystal Silicon: Novel Defect Profiles from BP Solar's Mono2 TM Wafers

Journal Solid State Phenomena (Volumes 131 - 133)
Volume Gettering and Defect Engineering in Semiconductor Technology XII
Edited by A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages 1-8
DOI 10.4028/www.scientific.net/SSP.131-133.1
Citation Nathan Stoddard et al., 2007, Solid State Phenomena, 131-133, 1
Online since October, 2007
Authors Nathan Stoddard, Bei Wu, Ian Witting, Magnus C. Wagener, Yongkook Park, George A. Rozgonyi, Roger Clark
Keywords Casting, Defect, Silicon, Solar Cell
Abstract

A novel crystal growth method has been developed for the production of ingots, bricks and wafers for solar cells. Monocrystallinity is achievable over large volumes with minimal dislocation incorporation. The resulting defect types, densities and interactions are described both microscopically for wafers and macroscopically for the ingot, looking closely at the impact of the defects on minority carrier lifetime. Solar cells of 156 cm2 size have been produced ranging up to 17% in efficiency using industrial screen print processes.

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