Paper Title:
Co-Germanide Schottky Contacts on Ge
  Abstract

In this study, Co germanide Schottky barrier diodes on n-Ge (100) substrate were fabricated by sputtering metal Co on Ge, followed by annealing in vacuum at 700°C. The influence of annealing time was investigated on both the electrical properties of Co germanide Schottky barrier diodes and on the phase formation on n-Ge (100) substrate. With increasing annealing times growing or transformation of germanide entities occurs leading to reduction of the trap concentration and therefore the leakage current.

  Info
Periodical
Solid State Phenomena (Volumes 131-133)
Edited by
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages
107-112
DOI
10.4028/www.scientific.net/SSP.131-133.107
Citation
L. Lajaunie, M.-L. David, K. Opsomer, E. Simoen, C. Claeys, J. F. Barbot, "Co-Germanide Schottky Contacts on Ge", Solid State Phenomena, Vols. 131-133, pp. 107-112, 2008
Online since
October 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K. Narita, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Junji Senzaki, Shinichi Nakashima
905
Authors: Eui Tae Kim, Anupam Madhukar
Abstract:We discuss the growth kinetics of InAs/GaAs self-assembled quantum dots (QDs) using two different InAs deposition rates, relatively fast...
539
Authors: Ryusuke Nakamura, Takehiro Shudo, Akihiko Hirata, Manabu Ishimaru, Hideo Nakajima
Abstract:Formation behavior of nanovoids during the annealing of amorphous Al2O3 and WO3 was studied by transmission...
541
Authors: Omar Abbes, Feng Xu, Alain Portavoce, Christophe Girardeaux, Khalid Hoummada, Vinh Le Thanh
Chapter 8: Diffusion in Electronic Materials
Abstract:An alternative solution for producing logic devices in microelectronics is spintronics (SPIN TRansport electrONICS). It relies on the fact...
439