Paper Title:
Internal Dissolution of Buried Oxide in SOI Wafers
  Abstract

High temperature anneal of SOI wafers in oxygen-free atmosphere results in internal buried oxide dissolution and top Si layer etching. Dissolution rate is determined by interstitial oxygen diffusion through the top Si layer and evaporation from the top Si surface in the form of SiO. It has been observed that kinetics of the process follows linear-parabolic law. Simple thermodynamic model is proposed, which explains observed dependences on temperature and top Si layer thickness.

  Info
Periodical
Solid State Phenomena (Volumes 131-133)
Edited by
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages
113-118
DOI
10.4028/www.scientific.net/SSP.131-133.113
Citation
O. Kononchuk, F. Boedt , F. Allibert, "Internal Dissolution of Buried Oxide in SOI Wafers", Solid State Phenomena, Vols. 131-133, pp. 113-118, 2008
Online since
October 2007
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Price
$32.00
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