Paper Title:
Microwave and Infra Red Light Absorption Studies of Carrier Lifetime in Silicon and Germanium
  Abstract

Results are presented of a comparative study of carrier lifetime in silicon and germanium. The impact of surface quality and passivation, of dopant type and concentration and of metallic impurities is studied using microwave probed free carrier absorption transient techniques.

  Info
Periodical
Solid State Phenomena (Volumes 131-133)
Edited by
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages
149-154
DOI
10.4028/www.scientific.net/SSP.131-133.149
Citation
E. Gaubas, J. Vanhellemont, "Microwave and Infra Red Light Absorption Studies of Carrier Lifetime in Silicon and Germanium", Solid State Phenomena, Vols. 131-133, pp. 149-154, 2008
Online since
October 2007
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