An unusual pattern of the Oxidation Induced Stacking Faults (OISF) in the heavily boron-doped silicon is reported. Instead of the commonly reported simple OISF ring, we observe a banded OISF pattern. The pattern reflects the distribution of residual vacancies as it is described by Voronkov and Falster [J. Crystal Growth 204 (1999) 462]. We show that the oxygen precipitates in the L- and H- bands grow to an abnormally large size during the crystal growth and which serve as the OISF nuclei during subsequent wafer oxidation. It is concluded that a combination of the high boron, oxygen and vacancy concentration is responsible for the enhanced oxygen precipitation during the crystal growth.