Paper Title:
Influence of the Dislocation Travel Distance on the DLTS Spectra of Dislocations in Cz-Si
  Abstract

We investigated the development of dislocation-related DLTS spectra in n-CZ-Si crystals with small (about 7.104 cm-2) number of long individual dislocations depending on the distance L that dislocations traveled during deformation at 600oC and on the velocity of dislocations. We found that a typical dislocation-related DLTS signal appeared only when dislocations traveled a significant distance that is more than 150-200μm, and it depended strongly on dislocation velocity. The results were interpreted on the assumption that the DLTS signal corresponds to some core defects and atomic impurities accumulated on the dislocations during their slow motion. At high concentration of deep level defects on dislocations a strange “negative DLTS” signal was observed. This can be explained by electron tunneling between deep defects along dislocations.

  Info
Periodical
Solid State Phenomena (Volumes 131-133)
Edited by
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages
175-182
DOI
10.4028/www.scientific.net/SSP.131-133.175
Citation
V. V. Kveder, V. I. Orlov, M. Khorosheva, M. Seibt, "Influence of the Dislocation Travel Distance on the DLTS Spectra of Dislocations in Cz-Si", Solid State Phenomena, Vols. 131-133, pp. 175-182, 2008
Online since
October 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: M. Badylevich, Yu.L. Iunin, Vitaly V. Kveder, Valeri I. Orlov, Yu. Osipyan
433
Authors: Valeri I. Orlov, Yu.L. Iunin, M. Badylevich, O. Lysytskiy, Hans Richter
465
Authors: V.N. Babentsov, V.A. Boyko, A.F. Kolomys, G.A. Shepelski, V.V. Strelchuk, N.I. Tarbaev
Abstract:Dislocation-related defects induced by dislocation motion in p-CdTe were studied. Generation of “fresh” dislocations from the indented point...
195
Authors: Manfred Reiche, Martin Kittler, Eckhard Pippel, Hans Kosina, Alois Lugstein, Hartmut Uebensee
Chapter 3: Intrinsic Point Defects and Dislocations in Silicon
Abstract:Dislocations are one-dimensional crystal defects. Their dimension characterize the defects as nanostructures (nanowires). Measurements on...
141
Authors: V.I. Orlov, E.B. Yakimov, Nikolai Yarykin
Chapter 3: Intrinsic Point Defects and Dislocations in Silicon
Abstract:Formation of the dislocation trails (DTs) left at the slip plane behind expanding dislocation half-loops is studied in Cz-Si plastically...
155