SEM Investigation of Surface Defects Arising at the Formation of a Buried Nitrogen-Containing Layer in Silicon
| Periodical | Solid State Phenomena (Volumes 131 - 133) |
|---|---|
| Main Theme | Gettering and Defect Engineering in Semiconductor Technology XII |
| Edited by | A. Cavallini, H. Richter, M. Kittler and S. Pizzini |
| Pages | 195-200 |
| DOI | 10.4028/www.scientific.net/SSP.131-133.195 |
| Citation | A.V. Frantskevich et al., 2007, Solid State Phenomena, 131-133, 195 |
| Online since | October, 2007 |
| Authors | A.V. Frantskevich, Anis M. Saad, A.K. Fedotov, E.I. Rau, A.V. Mazanik, N.V. Frantskevich |
| Keywords | Hydrogen, Nitrogen, Scanning Electron Microscope (SEM), Silicon |
| Price | US$ 28,- |
The main goal of this work is to demonstrate the correlation between the density and type of surface defects arising during the formation of a buried nitrogen-containing layer in Si wafers, and the number of buried defects formed by different dose hydrogen preimplantation. Standard commercial 12 ⋅cm boron-doped and 4.5 ⋅cm phosphorous-doped Cz Si wafers were subjected to hydrogen ion implantation at room temperature with the energy 100 keV and doses 1⋅1015 - 4⋅1016 at/cm2. Then nitrogen was introduced into silicon from a DC plasma source at a temperature of 300 oС. Finally, all samples were subjected to 2 h vacuum annealing at 900 oС. The experiments have shown that the density and type of the surface defects depend significantly on the dose of hydrogen implantation, parameters of N+-plasma treatment, and conductivity type of silicon. Optimization of the above-mentioned parameters makes it possible to create the substrates containing a buried dielectric SixNy layer and having a practically defect-free surface.
