Paper Title:
Divacancy Induced Improvement for Stabilization of Silicon Conductivity versus Temperature
  Abstract

In present work temperature stable conductivity is considered for neutron-doped FZ silicon with point radiation defects. It was shown that divacancy formed after electron irradiation allow to increase resistivity of silicon at room temperature, what lead to less variation of conductivity in a range of temperatures 20-160C. Discrepancy between experimental and theoretical data was evaluated and corrected with introduction in the model deep level center Ec-0.6eV. As result of investigation power resistors were elaborated with 10% deviation from nominal value within the range of temperatures.

  Info
Periodical
Solid State Phenomena (Volumes 131-133)
Edited by
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages
21-26
DOI
10.4028/www.scientific.net/SSP.131-133.21
Citation
G.N. Kamaev, M.D. Efremov, V.A. Stuchinsky, B.I. Mihailov, S.G. Kurkin, "Divacancy Induced Improvement for Stabilization of Silicon Conductivity versus Temperature", Solid State Phenomena, Vols. 131-133, pp. 21-26, 2008
Online since
October 2007
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Price
$32.00
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