Divacancy Induced Improvement for Stabilization of Silicon Conductivity versus Temperature |
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| Journal | Solid State Phenomena (Volumes 131 - 133) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology XII |
| Edited by | A. Cavallini, H. Richter, M. Kittler and S. Pizzini |
| Pages | 21-26 |
| DOI | 10.4028/www.scientific.net/SSP.131-133.21 |
| Citation | G.N. Kamaev et al., 2007, Solid State Phenomena, 131-133, 21 |
| Online since | October, 2007 |
| Authors | G.N. Kamaev, M.D. Efremov, V.A. Stuchinsky, B.I. Mihailov, S.G. Kurkin |
| Keywords | Divacancy, Electron Irradiation, FZ Silicon, Multi-Electron Center, Power Electronics |
| Abstract | In present work temperature stable conductivity is considered for neutron-doped FZ silicon with point radiation defects. It was shown that divacancy formed after electron irradiation allow to increase resistivity of silicon at room temperature, what lead to less variation of conductivity in a range of temperatures 20-160C. Discrepancy between experimental and theoretical data was evaluated and corrected with introduction in the model deep level center Ec-0.6eV. As result of investigation power resistors were elaborated with 10% deviation from nominal value within the range of temperatures. |
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