Paper Title:
Peculiarities of Dislocation Related D1/D2 Bands Behavior under Copper Contamination in Silicon
  Abstract

In this paper we present a detailed investigation of peculiarities of dislocation related D1/D2 bands behavior in silicon doped with Cu. For this purpose float zone grown (FZ) p-type silicon with B-doping 2.85·1015cm-3 was deformed by 3-point bending method at 950flC up to dislocation density of 2±0.2·106 cm-2. The deformed samples were contaminated with Cu up to several concentrations from 6·1013 cm-3 to 5·1016 cm-3. The variation in dislocation related spectra were traced after different thermal treatments. A decrease of D1/D2 bands intensity in quenched samples was observed even after their storage at room temperature. Taking into account the fact that Cu has a high mobility even at room temperature the decrease of D1/D2 bands intensity can be attributed to passivation of corresponding luminescence centers by Cu atoms. The influence of Cu contamination on D2 band is much more complicated as compared to D1 band. New line in position about 883 meV was observed as a result of storage of samples at room temperature and subsequent isochronous anneals. It was observed that D1/D2 band luminescence sharply increased in 30K – 50K range in samples with high Cu doping level. In addition the line in about 830 meV position became stronger at these temperatures whereas its intensity was negligible at 6K.

  Info
Periodical
Solid State Phenomena (Volumes 131-133)
Edited by
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages
213-218
DOI
10.4028/www.scientific.net/SSP.131-133.213
Citation
A.N. Tereshchenko, E.A. Steinman, "Peculiarities of Dislocation Related D1/D2 Bands Behavior under Copper Contamination in Silicon", Solid State Phenomena, Vols. 131-133, pp. 213-218, 2008
Online since
October 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: M. Zaghdoudi, M.M. Abdelkrim, M. Fathallah, T. Mohammed-Brahim, F. Le Bihan
Abstract:The optical and electrical properties of undoped and low doped polycrystalline silicon films deposited by LPCVD technique are analysed....
305
Authors: Tie Cheng Lu, Xue Jun Wang, Bing Xun Cheng, Qiang Hu, Shao Bo Dun
Abstract:In this paper, transparent ceramics Mn:MgAl2O4, which are potentially applicable in visibleband laser field, were prepared and their light...
1229
Authors: Ho Keun Lee
Abstract:The effect of Co-doping and thermal treatments on the superconducting properties of the heavily overdoped (Lu0.8Ca0.2)Ba2Cu3Oz has been...
108
Authors: Yu Juan Xia, Wei Feng Liu, Fu Qiang Huang, Wen Deng Wang, Xin Ping Lin, Min Ling Liu, Jian Lin Shi
Abstract:Eu-doped CaS phosphors were prepared from sulfurization of CaCO3 in H2S gas without flux. The doping of Eu activator was conducted in two...
315
Authors: Felix Oehlschläger, Sandrine Juillaguet, Hervé Peyre, Jean Camassel, Peter J. Wellmann
Abstract:Photoluminescence(PL)-topography is a powerful method to determine the charge carrier concentration of SiC-wafers. The following work...
259