Paper Title:
Multiplicity of Nitrogen Species in Silicon: The Impact on Vacancy Trapping
  Abstract

Nitrogen in silicon is known to affect dramatically the properties of voids. A plausible mechanism could be vacancy trapping by nitrogen interstitial species, mostly by the minor monomeric species (N1) with only a negligible contribution of the major dimeric species (N2). However, a more careful analysis of the published data shows that in Czochralski silicon no vacancy trapping occurs at the void formation stage (around 1100oC). The implication is that the trapping reaction, V + N1, although favoured thermodynamically, is of a negligible rate. Therefore, the nitrogen effect on voids in Czochralski Si is entirely due to nitrogen adsorption at the void surface. Quite a different mechanism operates in Float-Zoned crystals where voids are formed at lower T. Here vacancy trapping by N2 seems to be responsible for void suppression.

  Info
Periodical
Solid State Phenomena (Volumes 131-133)
Edited by
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages
219-224
DOI
10.4028/www.scientific.net/SSP.131-133.219
Citation
V. V. Voronkov, R. J. Falster, "Multiplicity of Nitrogen Species in Silicon: The Impact on Vacancy Trapping", Solid State Phenomena, Vols. 131-133, pp. 219-224, 2008
Online since
October 2007
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Price
$32.00
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