Paper Title:
The Electrical and Optical Properties of Point and Extended Defects in Silicon Arising from Oxygen Precipitation
  Abstract

Oxygen precipitation in Si is a complex set of processes which has been studied over many years. Here we review theoretical work relating to the precipitation process. At temperatures around 450°C oxygen atoms become mobile and form a family of thermal double donors. The structure of these defects and the origin of their electrical activity is discussed. At temperature around 650°C these donors disappear and there is a growth of SiO2 precipitates along with rod like defects which are extended defects involving Si interstitials. At higher temperatures these collapse into dislocation loops. The structure and electrical properties of the rod like defect are described and compared with those of dislocations.

  Info
Periodical
Solid State Phenomena (Volumes 131-133)
Edited by
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages
225-232
DOI
10.4028/www.scientific.net/SSP.131-133.225
Citation
R. Jones, "The Electrical and Optical Properties of Point and Extended Defects in Silicon Arising from Oxygen Precipitation", Solid State Phenomena, Vols. 131-133, pp. 225-232, 2008
Online since
October 2007
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$32.00
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