Paper Title:
Primary Defects in n-Type Irradiated Germanium: A First-Principles Investigation
  Abstract

The properties of point defects introduced by low temperature electron irradiation of germanium are investigated by first-principles modeling. Close Frenkel pairs, including the metastable fourfold coordinated defect, are modelled and their stability is discussed. It is found that damage evolution upon annealing below room temperature can be consistently explained with the formation of correlated interstitial-vacancy pairs if the charge-dependent properties of the vacancy and self-interstitial are taken into account. We propose that Frenkel pairs can trap up to two electrons and are responsible for conductivity loss in n-type Ge at low temperatures.

  Info
Periodical
Solid State Phenomena (Volumes 131-133)
Edited by
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages
253-258
DOI
10.4028/www.scientific.net/SSP.131-133.253
Citation
A. Carvalho, R. Jones, C. Janke, S. Öberg, P. R. Briddon, "Primary Defects in n-Type Irradiated Germanium: A First-Principles Investigation", Solid State Phenomena, Vols. 131-133, pp. 253-258, 2008
Online since
October 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Liudmila V. Selezneva, Andrei V. Nazarov
Abstract:This work is devoted to simulation of interstitial atom diffusion in fcc metals with point defects. We used the molecular static and the...
1275
Authors: A. Carvalho, R. Jones, J. Coutinho, Vitor J.B. Torres, Patrick R. Briddon
Abstract:We report on the energetics, electrical and optical activity of small self-interstitial (I3 and I4) clusters in Si, found from ab-initio...
175
Authors: Adam Gali, T. Hornos, Nguyen Tien Son, Erik Janzén
Abstract:We have studied the small clusters of silicon and carbon interstitials by ab initio supercell calculations in 4H-SiC. We found that silicon...
413
Authors: L.F. Makarenko, F.P. Korshunov, Stanislav B. Lastovskii, L.I. Murin, Michael Moll
Abstract:DLTS studies of transformation kinetics of different carbon–related complexes in electron irradiated n- and p-type silicon have been...
155
Authors: Vladimir P. Markevich, Anthony R. Peaker, Bruce Hamilton, Vasilii E. Gusakov, Stanislav B. Lastovskii, Leonid I. Murin, Naveengoud Ganagona, E.V. Monakhov, Bengt G. Svensson
Chapter 6: Radiation- and Impurity-Related Defect Studies in Silicon and Germanium
Abstract:It is argued in this work that a DLTS signal associated with hole emission from a radiation-induced defect with an energy level at...
290