Paper Title:
A Theoretical Study of Copper Contaminated Dislocations in Silicon
  Abstract

Recently, the interaction of copper with dislocations in p-type Si/SiGe/Si structures has been investigated experimentally and a new dislocation related DLTS-level at Ev +0.32 eV was detected after intentional contamination with copper. To determine the origin of this newly detected level, in this work we present first density functional calculations of substitutional copper at 90◦ and 30◦ partial dislocations in silicon. Defect–dislocation binding energies are determined and electrical gap levels are calculated and compared with the experimental data. As a result, the observed level at Ev + 0.32 eV is tentatively assigned to the single acceptor level of substitutional copper at the dislocation.

  Info
Periodical
Solid State Phenomena (Volumes 131-133)
Edited by
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages
259-264
DOI
10.4028/www.scientific.net/SSP.131-133.259
Citation
N. Fujita, R. Jones, S. Öberg, P. R. Briddon, A.T. Blumenau, "A Theoretical Study of Copper Contaminated Dislocations in Silicon", Solid State Phenomena, Vols. 131-133, pp. 259-264, 2008
Online since
October 2007
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Price
$32.00
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