Paper Title:
Engineering of Dislocation-Loops for Light Emission from Silicon Diodes
  Abstract

Luminescence properties of silicon light emitting diodes with engineered dislocation loops were investigated. Dislocation loops were formed by Si+-ion implantation above and below metallurgical p+-n junction followed by an annealing step. The diodes showed characteristic dislocation (D-band) and band-to-band luminescence. Measurements of carrier-injection level dependence of the D-band signal intensity were performed. The results are in agreement with the model for dislocation luminescence, which suggests rediative transition between two, dislocation-related shallow levels. A gradual blue-shift of the D-band peak positions was observed with an increase in the carrier injection level in electroluminescence and photoluminescence. A supposition about existence of strong Stark effect for the excitonic dislocation states allows explaining the observations. Namely, in the build-in electric field of the p-n junction the exciton energies are red-shifted. The injected charge carriers lower the field and thus cause the blue-shift of the peak positions. A fitting of the data using the quadratic Stark effect equation suggests 795 meV for the spectral position of D1 peak at 300 K and 0.0186 meV/(kV/cm)2 for the characteristic constant.

  Info
Periodical
Solid State Phenomena (Volumes 131-133)
Edited by
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages
303-308
DOI
10.4028/www.scientific.net/SSP.131-133.303
Citation
T. Mchedlidze, T. Arguirov, M. Kittler, T. Hoang, J. Holleman, P. LeMinh, J. Schmitz, "Engineering of Dislocation-Loops for Light Emission from Silicon Diodes", Solid State Phenomena, Vols. 131-133, pp. 303-308, 2008
Online since
October 2007
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$32.00
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