Paper Title:
Structure of Magnetically Ordered Si:Mn
  Abstract

The structure studies of single crystalline silicon implanted at 340 K or 610 K with Mn+ ions (Si:Mn) and subsequently processed under atmospheric and enhanced hydrostatic pressure at up to 1270 K are reported. The defect structure was determined by an analysis of X-ray diffuse scattering around the 004 reciprocal lattice point and by electron microscopy. High resolution X-ray diffraction techniques based on the conventional source of radiation were used for this purpose. The crystal structure of Si:Mn and the Si1-xMnx precipitates in the implantation – disturbed layer were studied by synchrotron radiation diffraction in the grazing incidence geometry. Processing of Si:Mn results in crystallization of amorphous Si within the buried implantation – disturbed layer and in formation of Mn4Si7 precipitates. Structural changes are dependent both on temperature of the Si substrate at implantation and on processing parameters.

  Info
Periodical
Solid State Phenomena (Volumes 131-133)
Edited by
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages
327-332
DOI
10.4028/www.scientific.net/SSP.131-133.327
Citation
J. Bak-Misiuk, E. Dynowska, P. Romanowski, A. Shalimov, A. Misiuk, S. Kret, P. Dłużewski, J. Domagala, W. Caliebe, J. Dabrowski , M. Prujszczyk, "Structure of Magnetically Ordered Si:Mn", Solid State Phenomena, Vols. 131-133, pp. 327-332, 2008
Online since
October 2007
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Price
$32.00
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