Paper Title:
Advances in Structural Characterization of Thin Film Nanocrystalline Silicon for Photovoltaic Applications
  Abstract

The knowledge and control of the structural and morphological properties of nanocrystalline silicon is a fundamental requisite for its proper application in photovoltaics. To this purpose, nanocrystalline silicon films grown by Low Energy Plasma Enhanced Chemical Vapour Deposition (LEPECVD) technique on different kinds of substrates were submitted to a systematic characterization using Raman spectroscopy, X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The results showed that the nature of the film substrate induces deep changes in the structural properties of the deposited films. The importance of a Raman in–depth analysis for an accurate determination of the sample structure has been also demonstrated.

  Info
Periodical
Solid State Phenomena (Volumes 131-133)
Edited by
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages
33-38
DOI
10.4028/www.scientific.net/SSP.131-133.33
Citation
A. Le Donne, S. Binetti, G. Isella, B. Pichaud, M. Texier, M. Acciarri, S. Pizzini, "Advances in Structural Characterization of Thin Film Nanocrystalline Silicon for Photovoltaic Applications", Solid State Phenomena, Vols. 131-133, pp. 33-38, 2008
Online since
October 2007
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Price
$32.00
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