Advances in Structural Characterization of Thin Film Nanocrystalline Silicon for Photovoltaic Applications |
| Journal |
Solid State Phenomena (Volumes 131 - 133) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology XII |
| Pages |
33-38 |
| DOI |
10.4028/www.scientific.net/SSP.131-133.33 |
| Online since |
October, 2007 |
| Authors |
Alessia Le Donne,
Simona Binetti,
Giovanni Isella,
Bernard Pichaud,
Michael Texier,
Maurizio Acciarri,
Sergio Pizzini
|
| Keywords |
Glassy and Crystalline Substrates, High Resolution Transmission Electron Microscopy (HRTEM), Nanocrystalline Silicon, Raman, Structural Properties, X-Ray Diffraction (XRD) |
| Abstract |
The knowledge and control of the structural and morphological properties of
nanocrystalline silicon is a fundamental requisite for its proper application in photovoltaics. To this
purpose, nanocrystalline silicon films grown by Low Energy Plasma Enhanced Chemical Vapour
Deposition (LEPECVD) technique on different kinds of substrates were submitted to a systematic
characterization using Raman spectroscopy, X-ray diffraction (XRD) and high-resolution
transmission electron microscopy (HRTEM). The results showed that the nature of the film
substrate induces deep changes in the structural properties of the deposited films. The importance of
a Raman in–depth analysis for an accurate determination of the sample structure has been also
demonstrated. |
| Full Paper |
Get the full paper by clicking here
|
| Preview |
Free first page example |
