Paper Title:
Evaluation of Surface Passivation Layers for Bulk Lifetime Estimation of High Resistivity Silicon for Radiation Detectors
  Abstract

In order to identify an appropriate low-temperature surface passivation that could be used for bulk lifetime estimation of high resistivity (HR) (> 1 k·cm) silicon for radiation detectors, different passivating layers were evaluated on n-type and p-type standard Czochralski (CZ), HR magnetic CZ and HR float zone (FZ) substrates. Minority carrier lifetime measurements were performed by means of a μW-PCD set-up. The results show that SiNx PECVD layers deposited at low temperatures (≤ 250°C) may be used to evaluate the impact of different processing steps and treatments on the substrate characteristics for radiation detectors. First results are obtained about a preliminary thermal treatment experiment to evaluate the thermal stability of the passivating layers, as well as the potential impact of the generation of thermal donors on minority carrier lifetime.

  Info
Periodical
Solid State Phenomena (Volumes 131-133)
Edited by
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages
431-436
DOI
10.4028/www.scientific.net/SSP.131-133.431
Citation
J.M. Rafí, L. Cardona-Safont, M. Zabala, C. Boulord, F. Campabadal, G. Pellegrini, M. Lozano, E. Simoen, C. Claeys, "Evaluation of Surface Passivation Layers for Bulk Lifetime Estimation of High Resistivity Silicon for Radiation Detectors", Solid State Phenomena, Vols. 131-133, pp. 431-436, 2008
Online since
October 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Maciej Wolborski, Mietek Bakowski, Viljami Pore, Mikko Ritala, Markku Leskelä, Adolf Schöner, Anders Hallén
Abstract:Aluminium oxide and titanium oxide films were deposited using the Atomic Layer Deposition method on n-type 4H SiC and p-type Si {001}...
701
Authors: Olivier Palais, Mustapha Lemiti, Jean-Francois Lelievre, Santo Martinuzzi
Abstract:In this work the efficiencies of different surface passivation techniques are compared. This paper emphasizes on the passivation provided by...
585
Authors: Giso Hahn, Martin Käs, Bernhard Herzog
Abstract:In this contribution an overview of hydrogenation issues for (multi-)crystalline silicon material is given. Crystalline silicon material for...
343
Authors: Bart Vermang, Aude Rothschild, Karine Kenis, Kurt Wostyn, Twan Bearda, A. Racz, X. Loozen, Joachim John, Paul W. Mertens, Jef Poortmans, Robert P. Mertens
Chapter 10: Wet Processing and Cleaning for Silicon Photo-Voltaic Applications
Abstract:Thermal atomic layer deposition (ALD) of Al2O3 provides an adequate level of surface passivation for both p-type and n-type Si solar cells....
357
Authors: Stefano Nicola Granata, Twan Bearda, Frederic Dross, Ivan Gordon, Jef Poortmans, Robert P. Mertens
Chapter 8: Cleaning and Wet Etching for Silicon Photo-Voltaic Applications
Abstract:In future, thin wafers (< 100µm) will be employed in silicon heterojunction solar cell to decrease modules cost-per-Watt-Peak. However, in...
321