Paper Title:
Photoinduced Variation of Capacitance Characteristics of MDS Structures with Three-Layer SiNx Dielectrics
  Abstract

Characterisation of three-layer dielectric embedded into MDS-structure (Metal- Dielectric-Silicon) was provided in the dark and under light illumination. In the dark, increasing of differential capacitance, simultaneously, with variation of differential conductivity of MDSstructures was detected. In the light strong changing of capacitance part of impedance was firstly observed, demonstrating decreasing almost to zero values and restoring up to maximal values in narrow bang of voltage applied. Variation of capacitance exceeds significantly so called dielectric layer capacitance, what interpreted as carriers exchanging between substrate and electronic states in SiNx probably due to three-layered kind of its nature.

  Info
Periodical
Solid State Phenomena (Volumes 131-133)
Edited by
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages
461-466
DOI
10.4028/www.scientific.net/SSP.131-133.461
Citation
S. A. Arzhannikova, M.D. Efremov, V. A. Volodin, G.N. Kamaev, D.V. Marin, V.S. Shevchuk, S.A. Kochubei, A.A. Popov, Y. A. Minakov, "Photoinduced Variation of Capacitance Characteristics of MDS Structures with Three-Layer SiNx Dielectrics", Solid State Phenomena, Vols. 131-133, pp. 461-466, 2008
Online since
October 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Jung Min Kim, Hyun Jung Her, Jeong Min Son, Y. Khang, Eun Hye Lee, Yong Sang Kim, Y.J. Choi, C.J. Kang
Abstract:Scanning probe microscope (SPM) with a conducting tip was used to electrically probe silicon nanocrystals (Si NCs) embedded in a SiO2 layer....
1094
Authors: Jeong Hyun Moon, Da Il Eom, Sang Yong No, Ho Keun Song, Jeong Hyuk Yim, Hoon Joo Na, Jae Bin Lee, Hyeong Joon Kim
Abstract:The La2O3 and Al2O3/La2O3 layers were grown on 4H-SiC by atomic layer deposition (ALD) method. The electrical properties of La2O3 on 4H-SiC...
1083
Authors: Pawel A. Sobas, Ulrike Grossner, Bengt G. Svensson
Abstract:Using impedance spectroscopy (IS) for the characterization of SiO2/4H-SiC (MOS) structures, insight on the capacitive and resistive...
501
Authors: Y. Yang, F. Yu, Ping Han, R.P. Ge, L. Yu
Chapter 30: Automation, Mechatronics and Robotics
Abstract:Capacitance-voltage method was used to analyze composition of the Si1-xGex alloy films with a stochiometry gradient of...
7613
Authors: Ming Kwei Lee, Chih Feng Yen, Sheng Hsiung Yang, Jung Chan Lee, Chi Hsuan Cheng, Wei Hau Cheng
Chapter 10: Power Electronics and Power Drives
Abstract:The (NH4)2 S treatment was used for the reduction of native oxides and passivation on GaAs. Atomic layer deposited...
1945