Paper Title:
Deep Level Transient Spectroscopy of Ultra Shallow Junctions in Si Formed by Implantation
  Abstract

We have carried out DLTS in highly doped p+n Ultra Shallow Junctions (USJ) in Si formed by ion implantation. The samples were implanted either with a 10keV or a 5keV B implant at a dose of 5*1015cm15. The 10keV sample was also implanted with P and the 5keV samples were implanted with P and increasing doses of As to simulate an USJ in an n-well. Due to the high P and/or As implant doses, it was observed that a band offset also exists between the n-type implanted region and the n-type starting material. Therefore these samples contain another depletion region apart from the expected p+n depletion region. However, the electric fields in these regions act in opposite directions assisting the profiling of different regions after careful selection of biasing conditions. A deep state is observed in the n-type region at EC-0.34eV which has a complex Laplace DLTS signature, which has arisen due to the implantation process.

  Info
Periodical
Solid State Phenomena (Volumes 131-133)
Edited by
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages
497-502
DOI
10.4028/www.scientific.net/SSP.131-133.497
Citation
N. Mitromara, J.H. Evans-Freeman, R. Duffy, "Deep Level Transient Spectroscopy of Ultra Shallow Junctions in Si Formed by Implantation", Solid State Phenomena, Vols. 131-133, pp. 497-502, 2008
Online since
October 2007
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