Paper Title:
Investigation of 4H-SiC Layers Implanted by Al Ions
  Abstract

  Info
Periodical
Solid State Phenomena (Volumes 131-133)
Edited by
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages
53-58
DOI
10.4028/www.scientific.net/SSP.131-133.53
Citation
E.V. Kolesnikova, E. V. Kalinina, A. A. Sitnikova, M.V. Zamoryanskaya, T.P. Popova, "Investigation of 4H-SiC Layers Implanted by Al Ions", Solid State Phenomena, Vols. 131-133, pp. 53-58, 2008
Online since
October 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.