Investigation of 4H-SiC Layers Implanted by Al Ions |
| Journal |
Solid State Phenomena (Volumes 131 - 133) |
| Volume |
Gettering and Defect Engineering in Semiconductor Technology XII |
| Edited by |
A. Cavallini, H. Richter, M. Kittler and S. Pizzini |
| Pages |
53-58 |
| DOI |
10.4028/www.scientific.net/SSP.131-133.53 |
| Citation |
E.V. Kolesnikova et al., 2007, Solid State Phenomena, 131-133, 53 |
| Online since |
October, 2007 |
| Authors |
E.V. Kolesnikova, Evgenia V. Kalinina, Alla A. Sitnikova, M.V. Zamoryanskaya, T.P. Popova |
| Keywords |
High Dose Implantation, Silicon Carbide (SiC) |
| Full Paper |
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