Paper Title:
Properties of Nanostructure Formed on SiO2/Si Interface by Laser Radiation
  Abstract

The aim of this work is to study optical properties of Si nanohills formed on the SiO2/Si interface by the pulsed Nd:YAG laser radiation. Nanohills which are self-organized on the surface of Si, are characterized by strong photoluminescence in the visible range of spectra with long wing in the red part of spectra. This peculiarity is explained by Quantum confinement effect in nanohillsnanowires with graded diameter. We have found a new method for graded band gap semiconductor formation using an elementary semiconductor. Graded change of band gap arises due to Quantum confinement effect.

  Info
Periodical
Solid State Phenomena (Volumes 131-133)
Edited by
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages
559-562
DOI
10.4028/www.scientific.net/SSP.131-133.559
Citation
A. Medvid, I. Dmitruk, P. Onufrijevs, I. Pundyk, "Properties of Nanostructure Formed on SiO2/Si Interface by Laser Radiation", Solid State Phenomena, Vols. 131-133, pp. 559-562, 2008
Online since
October 2007
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$32.00
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