Paper Title:
Mono- and Polycrystalline Silicon for Terahertz Intracenter Lasers
  Abstract

The performance of optically pumped terahertz silicon lasers with active media made from mono- and polycrystalline silicon doped by phosphorus has been investigated. The polycrystalline silicon samples consist of grains with a characteristic size distribution in the range from 50 to 500 m. Despite of significant changes of the principal phonon spectrum and increased scattering of phonons at grain boundaries, the silicon laser made from polycrystalline material has a laser threshold and an operation temperature only slightly worse than that of monocrystalline silicon lasers.

  Info
Periodical
Solid State Phenomena (Volumes 131-133)
Edited by
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages
579-582
DOI
10.4028/www.scientific.net/SSP.131-133.579
Citation
S. G. Pavlov, H. W. Hübers, N. V. Abrosimov, H. Riemann, "Mono- and Polycrystalline Silicon for Terahertz Intracenter Lasers", Solid State Phenomena, Vols. 131-133, pp. 579-582, 2008
Online since
October 2007
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$32.00
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