Mono- and Polycrystalline Silicon for Terahertz Intracenter Lasers |
|
| Journal | Solid State Phenomena (Volumes 131 - 133) |
|---|---|
| Volume | Gettering and Defect Engineering in Semiconductor Technology XII |
| Edited by | A. Cavallini, H. Richter, M. Kittler and S. Pizzini |
| Pages | 579-582 |
| DOI | 10.4028/www.scientific.net/SSP.131-133.579 |
| Citation | Sergeij G. Pavlov et al., 2007, Solid State Phenomena, 131-133, 579 |
| Online since | October, 2007 |
| Authors | Sergeij G. Pavlov, Heinz Wilhelm Hübers, Nikolay V. Abrosimov, H. Riemann |
| Keywords | Polycrystalline Silicon, Silicon Laser |
| Abstract | The performance of optically pumped terahertz silicon lasers with active media made from mono- and polycrystalline silicon doped by phosphorus has been investigated. The polycrystalline silicon samples consist of grains with a characteristic size distribution in the range from 50 to 500 m. Despite of significant changes of the principal phonon spectrum and increased scattering of phonons at grain boundaries, the silicon laser made from polycrystalline material has a laser threshold and an operation temperature only slightly worse than that of monocrystalline silicon lasers. |
| Full Paper | 
Get the full paper by clicking here
|
First page example
