Paper Title:
Silicon Doped with Lithium and Magnesium from the Melt for Terahertz Laser Application
  Abstract

Silicon crystals, doped with moderate concentration of magnesium or lithium, have been grown for application as optically pumped donor silicon lasers for the terahertz spectral region. The pedestal growth technique accompanied with axial-loaded dopant pills enabled manufacturing of large silicon crystals with a homogeneous donor distribution in the range from 1014 to 1016 cm-3, as required for intracenter silicon lasers. Terahertz-range photoluminescence from the grown crystals has been observed.

  Info
Periodical
Solid State Phenomena (Volumes 131-133)
Edited by
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages
589-594
DOI
10.4028/www.scientific.net/SSP.131-133.589
Citation
N. V. Abrosimov, N. Nötzel, H. Riemann, K. Irmscher, S. G. Pavlov, H. W. Hübers, U. Böttger, P. M. Haas, N. Drichko , M. Dressel, "Silicon Doped with Lithium and Magnesium from the Melt for Terahertz Laser Application", Solid State Phenomena, Vols. 131-133, pp. 589-594, 2008
Online since
October 2007
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$32.00
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