Silicon Doped with Lithium and Magnesium from the Melt for Terahertz Laser Application |
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| Journal | Solid State Phenomena (Volumes 131 - 133) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology XII |
| Edited by | A. Cavallini, H. Richter, M. Kittler and S. Pizzini |
| Pages | 589-594 |
| DOI | 10.4028/www.scientific.net/SSP.131-133.589 |
| Citation | Nikolay V. Abrosimov et al., 2007, Solid State Phenomena, 131-133, 589 |
| Online since | October, 2007 |
| Authors | Nikolay V. Abrosimov, N. Nötzel, H. Riemann, K. Irmscher, Sergeij G. Pavlov, Heinz Wilhelm Hübers, Ute Böttger, Philippe M. Haas, N. Drichko, M. Dressel |
| Keywords | Double Donors, Interstitial Donor, Silicon Laser |
| Abstract | Silicon crystals, doped with moderate concentration of magnesium or lithium, have been grown for application as optically pumped donor silicon lasers for the terahertz spectral region. The pedestal growth technique accompanied with axial-loaded dopant pills enabled manufacturing of large silicon crystals with a homogeneous donor distribution in the range from 1014 to 1016 cm-3, as required for intracenter silicon lasers. Terahertz-range photoluminescence from the grown crystals has been observed. |
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