Paper Title:

Silicon Doped with Lithium and Magnesium from the Melt for Terahertz Laser Application

Periodical Solid State Phenomena (Volumes 131 - 133)
Main Theme Gettering and Defect Engineering in Semiconductor Technology XII
Edited by A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages 589-594
DOI 10.4028/www.scientific.net/SSP.131-133.589
Citation Nikolay V. Abrosimov et al., 2007, Solid State Phenomena, 131-133, 589
Online since October, 2007
Authors Nikolay V. Abrosimov, N. Nötzel, H. Riemann, K. Irmscher, Sergeij G. Pavlov, Heinz Wilhelm Hübers, Ute Böttger, Philippe M. Haas, N. Drichko, M. Dressel
Keywords Double Donors, Interstitial Donor, Silicon Laser
Price US$ 28,-
Article Preview
View full size
Abstract

Silicon crystals, doped with moderate concentration of magnesium or lithium, have been grown for application as optically pumped donor silicon lasers for the terahertz spectral region. The pedestal growth technique accompanied with axial-loaded dopant pills enabled manufacturing of large silicon crystals with a homogeneous donor distribution in the range from 1014 to 1016 cm-3, as required for intracenter silicon lasers. Terahertz-range photoluminescence from the grown crystals has been observed.