Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors |
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| Journal | Solid State Phenomena (Volumes 131 - 133) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology XII |
| Edited by | A. Cavallini, H. Richter, M. Kittler and S. Pizzini |
| Pages | 613-618 |
| DOI | 10.4028/www.scientific.net/SSP.131-133.613 |
| Citation | Sergeij G. Pavlov et al., 2007, Solid State Phenomena, 131-133, 613 |
| Online since | October, 2007 |
| Authors | Sergeij G. Pavlov, Heinz Wilhelm Hübers, Nikolay V. Abrosimov, H. Riemann, H.H. Radamson, N.A Bekin, A.N. Yablonsky, R.Kh. Zhukavin, Yu.N. Drozdov, V.N. Shastin |
| Keywords | Silicon Germanium, Terahertz Emission |
| Abstract | Terahertz-range photoluminescence from silicon-germanium crystals and superlattices doped by phosphor has been studied under optical excitation by radiation from a mid-infrared CO2 laser at low temperature. SiGe crystals with a Ge content between 0.9 and 6.5 %, doped by phosphor with a concentration optimal for silicon laser operation, do not exhibit terahertz gain. On the contrary, terahertz-range gain of ~ 2.3 - 3.2 cm-1 has been observed for donor-related optical transitions in Si/SiGe strained superlattices at pump intensities above 100 kW/cm2. |
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