Paper Title:

Effect of Various Treatments on Light Emission Properties of Si-Rich-SiOx Structures

Periodical Solid State Phenomena (Volumes 131 - 133)
Main Theme Gettering and Defect Engineering in Semiconductor Technology XII
Edited by A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages 65-70
DOI 10.4028/www.scientific.net/SSP.131-133.65
Citation M. Baran et al., 2007, Solid State Phenomena, 131-133, 65
Online since October, 2007
Authors M. Baran, N. Korsunska, L. Khomenkova, T. Stara, V. Khomenkov, Y. Goldstein, E. Savir, J. Jedrzejewski
Keywords EPR, Photoluminescence (PL), Raman Scattering, Si Crystallites, Silicon Oxide Defect, Si-Rich-SiOx Structures
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Abstract

The effect of preparation conditions and annealing treatment on Si-rich-SiOx layers was investigated. It was observed that oxygen plays important role in the creation of light-emitting centres. It was found that the emission in the green-orange spectral range is connected with silicon oxide defects which contain dangling bonds. At the same time PL band in the infrared spectral range is caused by recombination of carriers in amorphous silicon or nanocrystalline one. It is shown that modification of defect content under various treatments gives the possibility to control the emission properties of the layers.