Effect of Various Treatments on Light Emission Properties of Si-Rich-SiOx Structures |
|
| Journal | Solid State Phenomena (Volumes 131 - 133) |
|---|---|
| Volume | Gettering and Defect Engineering in Semiconductor Technology XII |
| Edited by | A. Cavallini, H. Richter, M. Kittler and S. Pizzini |
| Pages | 65-70 |
| DOI | 10.4028/www.scientific.net/SSP.131-133.65 |
| Citation | M. Baran et al., 2007, Solid State Phenomena, 131-133, 65 |
| Online since | October, 2007 |
| Authors | M. Baran, N. Korsunska, L. Khomenkova, T. Stara, V. Khomenkov, Y. Goldstein, E. Savir, J. Jedrzejewski |
| Keywords | EPR, Photoluminescence (PL), Raman Scattering, Si Crystallites, Silicon Oxide Defect, Si-Rich-SiOx Structures |
| Abstract | The effect of preparation conditions and annealing treatment on Si-rich-SiOx layers was investigated. It was observed that oxygen plays important role in the creation of light-emitting centres. It was found that the emission in the green-orange spectral range is connected with silicon oxide defects which contain dangling bonds. At the same time PL band in the infrared spectral range is caused by recombination of carriers in amorphous silicon or nanocrystalline one. It is shown that modification of defect content under various treatments gives the possibility to control the emission properties of the layers. |
| Full Paper | 
Get the full paper by clicking here
|
First page example
