Paper Title:
Size Dependent Photoluminescence of Si Nano-Crystals Embedded in Amorphous Silicon
  Abstract

This paper presents the results of PL spectrum studies for Si nano-crystallites embedded in amorphous silicon matrix. Investigated layers were deposited by the hot-wire CVD method on glass substrates at the wafer temperature 300°C and different filament temperatures from the range 1650-1950°C. It was shown that variation of temperatures of filament (hot-wire) allows to produce the films with desirable parameters. Using of X-ray diffraction and photoluminescence methods the correlation between some photoluminescence bands and the sizes of Si nano-crystallites as well as the amorphous phase volume was shown. The nature of light emission is discussed.

  Info
Periodical
Solid State Phenomena (Volumes 131-133)
Edited by
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages
71-76
DOI
10.4028/www.scientific.net/SSP.131-133.71
Citation
A.L. Q. Vasques, T.V. Torchynska, G. Polupan, Y. Matsumoto-Kuwabara, L. Khomenkova, L.V. Shcherbyna, "Size Dependent Photoluminescence of Si Nano-Crystals Embedded in Amorphous Silicon", Solid State Phenomena, Vols. 131-133, pp. 71-76, 2008
Online since
October 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: V.A. Shmatko, T.N. Myasoedova, G.E. Yalovega
Chapter 1: New Materials and Advanced Materials
Abstract:In the paper the SiO2CuOx and SiO2(CuOxSnOy) thin films were deposited from the...
15