Size Dependent Photoluminescence of Si Nano-Crystals Embedded in Amorphous Silicon |
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| Journal | Solid State Phenomena (Volumes 131 - 133) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology XII |
| Edited by | A. Cavallini, H. Richter, M. Kittler and S. Pizzini |
| Pages | 71-76 |
| DOI | 10.4028/www.scientific.net/SSP.131-133.71 |
| Citation | A.L. Quintos Vasques et al., 2007, Solid State Phenomena, 131-133, 71 |
| Online since | October, 2007 |
| Authors | A.L. Quintos Vasques, T.V. Torchynska, G. Polupan, Y. Matsumoto-Kuwabara, L. Khomenkova, L.V. Shcherbyna |
| Keywords | Amorphous Silicon, HW-CVD, Photoluminescence (PL), Silicon Nanostructure, Temperature Dependence, X-Ray Diffraction (XRD) |
| Abstract | This paper presents the results of PL spectrum studies for Si nano-crystallites embedded in amorphous silicon matrix. Investigated layers were deposited by the hot-wire CVD method on glass substrates at the wafer temperature 300°C and different filament temperatures from the range 1650-1950°C. It was shown that variation of temperatures of filament (hot-wire) allows to produce the films with desirable parameters. Using of X-ray diffraction and photoluminescence methods the correlation between some photoluminescence bands and the sizes of Si nano-crystallites as well as the amorphous phase volume was shown. The nature of light emission is discussed. |
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