Paper Title:
Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon
  Abstract

The carrier recombination activities of small angle (SA) grain boundaries (GBs) in multicrystalline Si (mc-Si) were systematically investigated by electron-beam-induced current (EBIC). At 300 K, general SA-GBs with tilt angle from 0° to 10° showed weak EBIC contrast (0- 10%) with the maximum appeared at 2°. At low temperature (100 K), all the SA-GBs showed strong EBIC contrast despite the tilt angle. Possible explanations for the variation of the EBIC contrast were discussed in terms of boundary dislocations.

  Info
Periodical
Solid State Phenomena (Volumes 131-133)
Edited by
A. Cavallini, H. Richter, M. Kittler and S. Pizzini
Pages
9-14
DOI
10.4028/www.scientific.net/SSP.131-133.9
Citation
J. Chen, T. Sekiguchi, S. Ito, D. R. Yang, "Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon", Solid State Phenomena, Vols. 131-133, pp. 9-14, 2008
Online since
October 2007
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Price
$32.00
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