Carrier Recombination Activities and Structural Properties of Small-Angle Boundaries in Multicrystalline Silicon |
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| Journal | Solid State Phenomena (Volumes 131 - 133) |
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| Volume | Gettering and Defect Engineering in Semiconductor Technology XII |
| Edited by | A. Cavallini, H. Richter, M. Kittler and S. Pizzini |
| Pages | 9-14 |
| DOI | 10.4028/www.scientific.net/SSP.131-133.9 |
| Citation | J. Chen et al., 2007, Solid State Phenomena, 131-133, 9 |
| Online since | October, 2007 |
| Authors | J. Chen, Takashi Sekiguchi, S. Ito, De Ren Yang |
| Keywords | EBIC, mc-Si, Small Angle Grain Boundaries |
| Abstract | The carrier recombination activities of small angle (SA) grain boundaries (GBs) in multicrystalline Si (mc-Si) were systematically investigated by electron-beam-induced current (EBIC). At 300 K, general SA-GBs with tilt angle from 0° to 10° showed weak EBIC contrast (0- 10%) with the maximum appeared at 2°. At low temperature (100 K), all the SA-GBs showed strong EBIC contrast despite the tilt angle. Possible explanations for the variation of the EBIC contrast were discussed in terms of boundary dislocations. |
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