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Gettering and Defect Engineering in Semiconductor Technology XII

Solid State Phenomena Volumes 131 - 133

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• p175 Influence of the Dislocation Travel Distance on the DLTS Spectra of Dislocations in Cz-Si   [ 207 K ]
  Authors: Vitaly V. Kveder, Valeri I. Orlov, M. Khorosheva, Michael Seibt
• p183 Detection of Nickel in Silicon by Recombination Lifetime Measurements   [ 147 K ]
  Authors: Hele Savin, Marko Yli-Koski, Antti Haarahiltunen, H. Talvitie, Juha Sinkkonen
• p189 Effect of Diffusion of I Group Metal (Ag) on Characteristics of Metal/Porous Silicon Sensors   [ 209 K ]
  Authors: T.D Dzhafarov, S. Aydin, D. Oren
• p195 SEM Investigation of Surface Defects Arising at the Formation of a Buried Nitrogen-Containing Layer in Silicon   [ 8 M ]
  Authors: A.V. Frantskevich, Anis M. Saad, A.K. Fedotov, E.I. Rau, A.V. Mazanik, N.V. Frantskevich
• p201 Radiation Defects and Thermal Donors Introduced in Silicon by Hydrogen and Helium Implantation and Subsequent Annealing   [ 266 K ]
  Authors: Pavel Hazdra, Volodymyr V. Komarnitskyy
• p207 Infrared Absorption from Low Carbon Concentration, Low Dose, Annealed CZ Silicon   [ 199 K ]
  Authors: N. Inoue, Y. Goto, T. Sugiyama
• p213 Peculiarities of Dislocation Related D1/D2 Bands Behavior under Copper Contamination in Silicon   [ 447 K ]
  Authors: A.N. Tereshchenko, E.A. Steinman
• p219 Multiplicity of Nitrogen Species in Silicon: The Impact on Vacancy Trapping   [ 159 K ]
  Authors: Vladimir V. Voronkov, Robert J. Falster
• p225 The Electrical and Optical Properties of Point and Extended Defects in Silicon Arising from Oxygen Precipitation   [ 442 K ]
  Authors: R. Jones
• p233 Fundamental Interactions of Fe in Silicon: First-Principles Theory   [ 403 K ]
  Authors: Stefan Estreicher, Mahdi Sanati, N. Gonzalez Szwacki
• p241 First Principles Calculations of the Formation Energy of the Neutral Vacancy in Germanium   [ 142 K ]
  Authors: P. Śpiewak, Krzysztof J. Kurzydłowski, Koji Sueoka, Igor Romandic, Jan Vanhellemont
• p247 First-Principles Simulations of Frenkel Pair Formation and Annealing in Irradiated ß-SiC   [ 291 K ]
  Authors: Laurent Pizzagalli, Guillaume Lucas
• p253 Primary Defects in n-Type Irradiated Germanium: A First-Principles Investigation   [ 360 K ]
  Authors: A. Carvalho, R. Jones, C. Janke, Sven Öberg, Patrick R. Briddon
• p259 A Theoretical Study of Copper Contaminated Dislocations in Silicon   [ 1 M ]
  Authors: N. Fujita, R. Jones, Sven Öberg, Patrick R. Briddon, A.T. Blumenau
• p265 Theoretical Aspects on the Formation of the Tri-Interstitial Nitrogen Defect in Silicon   [ 180 K ]
  Authors: N. Fujita, R. Jones, T.A.G. Eberlein, Sven Öberg, Patrick R. Briddon