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Gettering and Defect Engineering in Semiconductor Technology XII

Solid State Phenomena Volumes 131 - 133

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• p363 Radiation-Induced Defect Reactions in Cz-Si Crystals Contaminated with Cu   [ 193 K ]
  Authors: Vladimir P. Markevich, Anthony R. Peaker, I.F. Medvedeva, Vasilii E. Gusakov, L.I. Murin, Bengt G. Svensson
• p369 The Role of High Temperature Treatments in Stress Release and Defect Reduction   [ 180 K ]
  Authors: Isabella Mica, Maria Luisa Polignano, Emiliano Bonera, Gian Pietro Carnevale, P. Magni
• p375 Properties of Si:Cr Annealed under Enhanced Stress Conditions   [ 501 K ]
  Authors: Andrzej Misiuk, Adam Barcz, Lee Chow, Barbara Surma, Jadwiga Bak-Misiuk, M. Prujszczyk
• p381 Radiation Enhanced Diffusion of Implanted Palladium in Silicon   [ 281 K ]
  Authors: Jan Vobecký
• p387 Evolution of Thermal Donors in Silicon Enhanced by Self-Interstitials   [ 173 K ]
  Authors: Vladimir V. Voronkov, G.I. Voronkova, A.V. Batunina, Robert J. Falster, V.N. Golovina, A.S. Guliaeva, N.B. Tiurina, M.G. Milvidski
• p393 Enhanced Formation of Thermal Donors in Germanium Doped Czochralski Silicon Pretreated by Rapid Thermal Annealing   [ 300 K ]
  Authors: Xin Zhu, De Ren Yang, Ming Li, Can Cui, Lei Wang, Xiang Yang Ma, Duan Lin Que
• p399 Study of Gettering Mechanisms in Silicon: Competitive Gettering between Phosphorus Diffusion Gettering and Other Gettering Sites   [ 272 K ]
  Authors: Mohammad B. Shabani, T. Yamashita, E. Morita
• p405 Effect of Grown-In Defects on the Structure of Oxygen Precipitates in Cz-Si Crystals with Different Diameter   [ 493 K ]
  Authors: V.G. Litovchenko, I.P. Lisovskyy, C. Claeys, V.P. Kladko, S.O. Zlobin, M.V. Muravska, O.O. Efremov, M.V. Slobodjan
• p413 Horizontal Versus Vertical Annealing of Silicon Wafers at High Temperatures   [ 1 M ]
  Authors: G. Kissinger, A. Fischer, G. Ritter, V.D. Akhmetov, Martin Kittler
• p419 Impact of Extended Defects on the Electrical Properties of Solar Grade Multicrystalline Silicon for Solar Cell Application   [ 1 M ]
  Authors: Simona Binetti, Maurizio Acciarri, Joris Libal
• p425 Investigation of the Hydrogen Transport Processes in Crystalline Silicon of n-Type Conductivity   [ 88 K ]
  Authors: Anis M. Saad, Oleg Velichko, Yu P. Shaman, Adam Barcz, Andrzej Misiuk, A.K. Fedotov
• p431 Evaluation of Surface Passivation Layers for Bulk Lifetime Estimation of High Resistivity Silicon for Radiation Detectors   [ 212 K ]
  Authors: J.M. Rafí, L. Cardona-Safont, M. Zabala, C. Boulord, F. Campabadal, G. Pellegrini, M. Lozano, Eddy Simoen, C. Claeys
• p437 HREM Study of the Strain Field Induced by the Entrance of a Matrix Dislocation within the Coherent Twin GB in Ge.   [ 547 K ]
  Authors: Jany Thibault-Pénisson, Martin J. Hÿtch
• p443 Nanoscale Imaging of CaCu₃Ti₄O₁₂ Dielectric Properties: The Role of Surface Defects   [ 2 M ]
  Authors: Vito Raineri, Patrick Fiorenza, Raffaella Lo Nigro, Derek C. Sinclair
• p449 Observation of Leakage Sites in High-k Gate Dielectrics in MOSFET Devices by Electron-Beam-Induced Current Technique   [ 2 M ]
  Authors: Takashi Sekiguchi, J. Chen, Masami Takase, Naoki Fukata, Naoto Umezawa, Kenji Ohmori, Toyohiro Chikyo, Ryu Hasunuma, Kikuo Yamabe, Seiji Inumiya, Yasuo Nara