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Gettering and Defect Engineering in Semiconductor Technology XII

Solid State Phenomena Volumes 131 - 133

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• p455 Vacancies in Growth-Rate-Varied CZ Silicon Crystal Observed by Low-Temperature Ultrasonic Measurements   [ 957 K ]
  Authors: Hiroshi Yamada Kaneta, Terutaka Goto, Yuichi Nemoto, Koji Sato, Masatoshi Hikin, Yasuhiro Saito, Shintaro Nakamura
• p461 Photoinduced Variation of Capacitance Characteristics of MDS Structures with Three-Layer SiN_x Dielectrics   [ 208 K ]
  Authors: Sofia A. Arzhannikova, M.D. Efremov, Vladimir A. Volodin, G.N. Kamaev, D.V. Marin, V.S. Shevchuk, S.A. Kochubei, A.A. Popov, Yu. A. Minakov
• p467 Silicon Epitaxial Layers for CCD and CMOS Imager Sensors : Limits and Challenges of the In-Line and Off-Line Metal Detection Techniques   [ 294 K ]
  Authors: G. Borionetti, S. Cox, P. Godio, I. Gohar, J. Pitney, M. Seacrist
• p473 New Opportunities to Study Defects by Soft X-Ray Absorption Fine Structure   [ 197 K ]
  Authors: Federico Boscherini, D. De Salvador, G. Bisognin, G. Ciatto
• p479 Femtosecond and Nanosecond Laser Pulse Crystallization of Thin a-Si:H Films on Non-Refractory Glass Substrates   [ 166 K ]
  Authors: Vladimir A. Volodin, M.D. Efremov, G.A. Kachurin, S.A. Kochubei, A.G. Cherkov, M. Deutschmann, N. Baersch
• p485 DLTS and PR Studies of Partially Relaxed InGaAs/GaAs Heterostructures Grown by MOVPE   [ 626 K ]
  Authors: Łukasz Gelczuk, Grzegorz Jóźwiak, Marcin Motyka, Maria Dąbrowska-Szata
• p491 Electrical Activation and Carrier Compensation in Si and Mg Implanted GaN by Scanning Capacitance Microscopy   [ 24 M ]
  Authors: Filippo Giannazzo, Ferdinando Iucolano, Fabrizio Roccaforte, Lucia Romano, Maria Grazia Grimaldi, Vito Raineri
• p497 Deep Level Transient Spectroscopy of Ultra Shallow Junctions in Si Formed by Implantation   [ 186 K ]
  Authors: Niki Mitromara, J.H. Evans-Freeman, Ray Duffy
• p503 Regular Dislocation Networks in Si. Part II: Luminescence   [ 1 M ]
  Authors: Teimuraz Mchedlidze, T. Wilhelm, X. Yu, Tzanimir Arguirov, G. Jia, Manfred Reiche, Martin Kittler
• p511 Mapping of Device Yield Relevant Electrical Si-Wafer Parameters   [ 618 K ]
  Authors: Kathrin Niemietz, Kay Dornich, Torsten Hahn, A. Helbig, Stefan Hellwig, Karl Heinz Stegemann, J.R. Niklas
• p517 Clustering of Gold on 6H-SiC and Local Nanoscale Electrical Properties   [ 394 K ]
  Authors: Francesco Ruffino, Filippo Giannazzo, Fabrizio Roccaforte, Vito Raineri, Maria Grazia Grimaldi
• p523 On the Failure of Intelligent Power Devices Induced by Extreme Electro-Thermal Fatigue. A Microstructural Analysis   [ 1 M ]
  Authors: Benjamin Khong, Marc Legros, Philippe Dupuy, Colette Levade, Guy Vanderschaeve
• p529 EBIC Investigations of Deformation Induced Defects in Si   [ 235 K ]
  Authors: Eugene B. Yakimov
• p535 Growth and Properties of Silicon Nanowires for Low-Dimensional Devices   [ 3 M ]
  Authors: P. Werner
• p541 Modification of Silicon Nanocrystals Embedded in an Oxide by High Energy Ion Implantation   [ 180 K ]
  Authors: I.V. Antonova, M.B. Gulyaev, V.A. Skuratov, D.V. Marin, E.V. Zaikina, Z.S. Yanovitskaya, J. Jedrzejewski, I. Balberg