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Gettering and Defect Engineering in Semiconductor Technology XII

Solid State Phenomena Volumes 131 - 133

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• p547 Hydrogenated Nanocrystalline Silicon Thin Films Studied by Scanning Force Microscopy.   [ 1 M ]
  Authors: Daniela Cavalcoli, Marco Rossi, Andrea Tomasi, Anna Cavallini, Danny Chrastina, Giovanni Isella
• p553 Phonon Confinement and Impurity Doping in Silicon Nanowires Synthesized by Laser Ablation   [ 420 K ]
  Authors: Naoki Fukata, T. Oshima, N. Okada, S. Matsushita, T. Tsurui, J. Chen, Takashi Sekiguchi, K. Murakami
• p559 Properties of Nanostructure Formed on SiO₂/Si Interface by Laser Radiation   [ 1020 K ]
  Authors: Arthur Medvid, Igor Dmitruk, Pavels Onufrijevs, Iryna Pundyk
• p563 Erbium Doped Materials for a Si-Based Microphotonics   [ 33 M ]
  Authors: F. Priolo, G. Franzò, F. Iacona, A. Irrera, R. Lo Savio, M. Miritello, E. Pecora
• p571 Regular Dislocation Networks in Silicon. Part I: Structure   [ 33 M ]
  Authors: T. Wilhelm, Teimuraz Mchedlidze, X. Yu, Tzanimir Arguirov, Martin Kittler, Manfred Reiche
• p579 Mono- and Polycrystalline Silicon for Terahertz Intracenter Lasers   [ 292 K ]
  Authors: Sergeij G. Pavlov, Heinz Wilhelm Hübers, Nikolay V. Abrosimov, H. Riemann
• p583 Dislocation Photoluminescence in Silicon and Germanium   [ 412 K ]
  Authors: S. Shevchenko, A.N. Tereshchenko
• p589 Silicon Doped with Lithium and Magnesium from the Melt for Terahertz Laser Application   [ 288 K ]
  Authors: Nikolay V. Abrosimov, N. Nötzel, H. Riemann, K. Irmscher, Sergeij G. Pavlov, Heinz Wilhelm Hübers, Ute Böttger, Philippe M. Haas, N. Drichko, M. Dressel
• p595 Investigation of the Temperature Degradation and Re-Activation of the Luminescent Centres in Rare Earth Implanted SiO₂ Layers   [ 259 K ]
  Authors: S. Prucnal, L. Rebohle, Wolfgang Skorupa
• p601 Light-Emitting Structures with Near-Band Edge Luminescence for Si Optoelectronics   [ 165 K ]
  Authors: N.A. Sobolev
• p607 The Unusual Temperature Shift of Dislocation Related D1/D2 PL Bands in Donor Doped Silicon   [ 382 K ]
  Authors: E.A. Steinman, A.N. Tereshchenko, Nikolay V. Abrosimov
• p613 Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors   [ 228 K ]
  Authors: Sergeij G. Pavlov, Heinz Wilhelm Hübers, Nikolay V. Abrosimov, H. Riemann, H.H. Radamson, N.A Bekin, A.N. Yablonsky, R.Kh. Zhukavin, Yu.N. Drozdov, V.N. Shastin
• p619 X-Ray Characterization of the Lattice Perfection of Heteroepitaxial SIS Structures   [ 1 M ]
  Authors: P. Zaumseil, G. Weidner, T. Schroeder
• p625 Electroluminescence from ZnO/n⁺-Si Heterojunction   [ 292 K ]
  Authors: Xiang Yang Ma, Pei Liang Chen, Dong Sheng Li, De Ren Yang
• p629 Characterization of SiO₂/Si Interface by Cathodoluminescent Method   [ 136 K ]
  Authors: M.V. Zamoryanskaya, V.I. Sokolov