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Ultra Clean Processing of Semiconductor Surfaces VIII

Solid State Phenomena Volume 134

• Papers
• Abstracts

• p-5 Acknowledgements   [ 151 K ]
• p3 Etching of Silicon Dioxide with Gas Phase HF and Water: Initiation, Bulk Etching, and Termination.   [ 2 M ]
  Authors: Gerardo Montaño-Miranda, Anthony Muscat
• p7 Evaluation of the Plasmaless Gaseous Etching Process   [ 474 K ]
  Authors: Yoshiya Hagimoto, Hajime Ugajin, Daisuke Miyakoshi, Hayato Iwamoto, Yusuke Muraki, Takehiko Orii
• p11 Single Wafer Hydrophobic Surface Preparation on 300mm by HF Vapor   [ 190 K ]
  Authors: Thierry Salvetat, Olivier Pollet, Pascal Besson, Névine Rochat
• p15 Insights into HF-Last Processes and Particle Performance in a Single Wafer Spin Cleaning Tool   [ 345 K ]
  Authors: Gim Chen, Ismail Kashkoush
• p19 Implementing an In Situ Surface Preparation Prior to Ni Deposition for Ni Salicide Processes   [ 261 K ]
  Authors: Kyuh Wan Chang, Scott Bolton, Marc Rossow, Rich Gregory, Jack Jiang, Dharmesh Jawarani, Stefan Zollner, Dean Denning, Jon Cheek
• p23 Electrical Impact of Various Arsenic-Residues Cleanings   [ 200 K ]
  Authors: Y.S. Tan, S.P. Chiew, Z. Yang, Zainab Ismail, Felicia Goh, Christopher Lim, Vincent Sih, Ee Ping Yu, Goh Boon Cheng
• p27 Elimination of Watermark on Extremely High-Doped Poly-Silicon Surfaces Using HF-Vapor Cleaning   [ 930 K ]
  Authors: Kang Heon Lee, John Ghekiere, Joon Bum Shim, Eric J. Bergman, Gyu Hyun Kim, Bai Kil Choi, Kee Joon Oh, Geun Min Choi
• p33 Passivation Studies of Germanium Surfaces   [ 465 K ]
  Authors: Jung Yup Kim, Jim McVittie, Krishna Saraswat, Yoshio Nishi
• p37 Germanium Surface Passivation Using Ozone Gaseous Phase   [ 190 K ]
  Authors: Virginie Loup, Pascal Besson, Olivier Pollet, Eugénie Martinez, Emmanuelle Richard, Sandrine Lhostis
• p41 Surface States and Recombination Loss on Wet-Chemically Passivated Si Studied by Surface Photovoltage (SPV) and Photoluminescence (PL)   [ 170 K ]
  Authors: H. Angermann, J. Rappich
• p45 Surface Microroughness of Silicon in Wet Process and its Minimization   [ 341 K ]
  Authors: Hitoshi Morinaga, Kenji Shimaoka, Tadahiro Ohmi
• p49 Oxidation of Si Surface Utilizing SCCO₂   [ 170 K ]
  Authors: K. Saito, T. Kitajima, M. Kohno, I. Mizobata, T. Iwata, S. Hirae
• p53 Single-Wafer Wet Chemical Oxide Formation for Pre-ALD High-k Deposition on 300 mm Wafer   [ 1 M ]
  Authors: Kenichi Sano, Akira Izumi, Atsuro Eitoku, James Snow, L. Nyns, S. Kubicek, R. Singanamalla, O. Richard, Thierry Conard, Rita Vos, Paul W. Mertens
• p57 Effect of SC-1 Treatment in Thermal Wall Oxide on Nanoscale STI Gap-Filling by O₃/TEOS CVD   [ 266 K ]
  Authors: Seung Cheol Lee, Choon Kun Ryu, Sang Wook Park, Gyu An Jin, Sang Deok Kim, Ki Hong Yang, Sang Hyon Kwak, Su Hyun Lim, Young Jun Kim, Sun Mi Park, Chul Sik Jang, Sung Ki Park