Paper Title:
Impact of RF Oxygen Plasma on Thermal Oxide Etch-Rate
  Abstract

  Info
Periodical
Solid State Phenomena (Volume 134)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
125-128
DOI
10.4028/www.scientific.net/SSP.134.125
Citation
E. Bellandi, A. Votta, F. Pipia, M. Ferrerio, C. De Marco, S. Alba, M. Alessandri, "Impact of RF Oxygen Plasma on Thermal Oxide Etch-Rate", Solid State Phenomena, Vol. 134, pp. 125-128, 2008
Online since
November 2007
Export
Price
$35.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Konstantin Vassilevski, J. Hedley, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright
925
Authors: Farid Sebaai, Anabela Veloso, Martine Claes, Katia Devriendt, Stephan Brus, Philippe Absil, Paul W. Mertens, Stefan De Gendt
Chapter 1: FEOL Surface Chemistry, Etching and Passivation
Abstract:We report in this work some process optimization effort in performing poly silicon removal for replacement gate process integration....
53
Authors: Masayuki Wada, H. Takahashi, James Snow, Rita Vos, Thierry Conard, Paul W. Mertens, H. Shirakawa
Chapter 1: FEOL Surface Chemistry, Etching and Passivation
Abstract:Since silicon will ultimately face physical limitations, germanium and III-V materials, such as Ga, GaAs, InGaAs, are being extensively...
19
Authors: Philippe Garnier
Chapter 1: FEOL: Surface Chemistry Group IV Semiconductors
Abstract:The silicon surface passivation with diluted HF solutions is hereby explained. Without a very stable, correct Si-H surface passivation, a...
8