Paper Title:
I: Ultra-Shallow Junction Cleaning: Metrology for Evaluating Dopant Loss and Substrate Erosion
  Abstract

We have investigated the use of Rs and SIMS measurements to quantify substrate erosion due to plasma ashing and subsequent wet cleaning in the creation of ultra-shallow junctions. The near-surface proximity of the implants makes them highly sensitive to various plasma and wet chemical processes. We also observed a dependency on the implant species, dose and energy that can be correlated to substrate damage incurred during implant.

  Info
Periodical
Solid State Phenomena (Volume 134)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
129-131
DOI
10.4028/www.scientific.net/SSP.134.129
Citation
M. S. Ameen, A. K. Srivastava, I. L. Berry, "I: Ultra-Shallow Junction Cleaning: Metrology for Evaluating Dopant Loss and Substrate Erosion", Solid State Phenomena, Vol. 134, pp. 129-131, 2008
Online since
November 2007
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