Paper Title:
Implementing an In Situ Surface Preparation Prior to Ni Deposition for Ni Salicide Processes
  Abstract

  Info
Periodical
Solid State Phenomena (Volume 134)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
19-22
DOI
10.4028/www.scientific.net/SSP.134.19
Citation
K. W. Chang, S. Bolton, M. Rossow, R. Gregory, J. Jiang, D. Jawarani, S. Zollner, D. Denning, J. Cheek, "Implementing an In Situ Surface Preparation Prior to Ni Deposition for Ni Salicide Processes", Solid State Phenomena, Vol. 134, pp. 19-22, 2008
Online since
November 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Alex Kabansky, Harry Lee
59
Authors: Mike F. MacMillan, Mark J. Loboda, Jian Wei Wan, Gil Yong Chung, E.P. Carlson, Michael J. Spaulding, D. Deese
Abstract:Gas phase etching of 4H SiC n+ substrates was performed utilizing chlorine containing etch chemistries in a hot wall CVD system. Carbon and...
69
Authors: Pascal Besson, Virginie Loup, Thierry Salvetat, Névine Rochat, Sandrine Lhostis, Sylvie Favier, Karen Dabertrand, Vincent Cosnier
67
Authors: Heini Ritala, Mikko Tuohiniemi
Chapter 1: FEOL Surface Chemistry, Etching and Passivation
Abstract:HF vapor etching using thin Al2O3 film as etch stop material was studied. It was found that behavior of...
45
Authors: Masayuki Wada, H. Takahashi, James Snow, Rita Vos, Thierry Conard, Paul W. Mertens, H. Shirakawa
Chapter 1: FEOL Surface Chemistry, Etching and Passivation
Abstract:Since silicon will ultimately face physical limitations, germanium and III-V materials, such as Ga, GaAs, InGaAs, are being extensively...
19