Paper Title:

Elimination of Watermark on Extremely High-Doped Poly-Silicon Surfaces Using HF-Vapor Cleaning

Periodical Solid State Phenomena (Volume 134)
Main Theme Ultra Clean Processing of Semiconductor Surfaces VIII
Edited by Paul Mertens, Marc Meuris and Marc Heyns
Pages 27-30
DOI 10.4028/www.scientific.net/SSP.134.27
Citation Kang Heon Lee et al., 2007, Solid State Phenomena, 134, 27
Online since November 2007
Authors Kang Heon Lee, John Ghekiere, Joon Bum Shim, Eric J. Bergman, Gyu Hyun Kim, Bai Kil Choi, Kee Joon Oh, Geun Min Choi
Keywords Dual Poly Gate, HF Vapor, Single Wafer, Tungsten Silicide
Price US$ 28,-
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