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Elimination of Watermark on Extremely High-Doped Poly-Silicon Surfaces Using HF-Vapor Cleaning

Journal Solid State Phenomena (Volume 134)
Volume Ultra Clean Processing of Semiconductor Surfaces VIII
Edited by Paul Mertens, Marc Meuris and Marc Heyns
Pages 27-30
DOI 10.4028/www.scientific.net/SSP.134.27
Online since November, 2007
Authors Kang Heon Lee, John Ghekiere, Joon Bum Shim, Eric J. Bergman, Gyu Hyun Kim, Bai Kil Choi, Kee Joon Oh, Geun Min Choi
Keywords Dual Poly Gate, HF Vapor, Single Wafer, Tungsten Silicide
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