Paper Title:
A Study on Water-Mark Defects in Copper/Low-k Chemical Mechanical Polishing
  Abstract

The prevention of watermark defect after copper/low-k CMP is a critical barrier for the successful integration of sub-100 nm devices. The water-mark can act as a leakage source and cause electrical shorts. The mechanism of water-mark formation during Cu/low-k CMP is suggested and its prevention methods are proposed in this study. A suitable surfactant treatment can improve the wettability of low-k films and reduce the watermark defects very effectively. The relatively stable low-k film surface is activated during polishing and prone to adsorb surfactant molecules during cleaning, which results in the reduction of water-marks after CMP. Another solution to eliminate water-mark is the application of IPA dryer in post CMP cleaning.

  Info
Periodical
Solid State Phenomena (Volume 134)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
295-298
DOI
10.4028/www.scientific.net/SSP.134.295
Citation
J. H. Han, J. E. Koo, K. S. Choi, B. L. Park, J. H. Chung, S. R. Hah, S. Y. Lee, Y. J. Kang, J. G. Park, " A Study on Water-Mark Defects in Copper/Low-k Chemical Mechanical Polishing", Solid State Phenomena, Vol. 134, pp. 295-298, 2008
Online since
November 2007
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Price
$32.00
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