Paper Title:
Optimization of a SC CO2 Post-Etch Cleaning for Copper Interconnections
  Abstract

  Info
Periodical
Solid State Phenomena (Volume 134)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
345-349
DOI
10.4028/www.scientific.net/SSP.134.345
Citation
D. Rébiscoul, V. Perrut, C. Ventosa, M. Assous, D. Louis, G. Passemard, "Optimization of a SC CO2 Post-Etch Cleaning for Copper Interconnections", Solid State Phenomena, Vol. 134, pp. 345-349, 2008
Online since
November 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Daniel A. Koos, Julia Svirchevski, Daniel J. Vitkavage, David G. Hansen, Karen A. Reinhardt, Frank Huang, Marie Mitchel, Guang Ying Zhang
291
Authors: Tomoko Suzuki, Atsushi Otake, Tomoko Aoki
Abstract:At 32nm and below the integration of extreme low-k dielectrics (ELK) with a permittivity of 2.2 or lower will require considerable process...
315
Authors: Yasa Sampurno, Yun Zhuang, Xun Gu, Sian Theng, Takenao Nemoto, Ting Sun, Fransisca Sudargho, Akinobu Teramoto, Ara Philipossian, Tadahiro Ohmi
Abstract:Brush scrubbing has been widely used in post chemical mechanical planarization (CMP) applications to remove contaminations, such as slurry...
363
Authors: Nicole Ahner, Sven Zimmermann, Matthias Schaller, Stefan E. Schulz
Chapter 7: Back-End-of-Line Cleaning
Abstract:Wet chemical plasma etch residue removal is a promising alternative to low-k dielectric degrading plasma cleaning processes. With decreasing...
201
Authors: Lucile Broussous, Kristell Courouble, Emmanuel Richard, Carole Pernel, Virginie Loup, Didier Lévy
Chapter 7: Back-End-of-Line Cleaning
Abstract:For the 32nm logic technology and beyond, more stringent specifications in terms of dimensions and materials integrity continue to drive the...
211