Paper Title:
Germanium Surface Passivation Using Ozone Gaseous Phase
  Abstract

  Info
Periodical
Solid State Phenomena (Volume 134)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
37-40
DOI
10.4028/www.scientific.net/SSP.134.37
Citation
V. Loup, P. Besson, O. Pollet, E. Martinez, E. Richard, S. Lhostis, "Germanium Surface Passivation Using Ozone Gaseous Phase", Solid State Phenomena, Vol. 134, pp. 37-40, 2008
Online since
November 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Bart Onsia, Matty Caymax, Thierry Conard, Stefan De Gendt, F. De Smedt, A. Delabie, C. Gottschalk, Marc M. Heyns, M. Green, S. Lin, Paul W. Mertens, W. Tsai, Chris Vinckier
19
Authors: Jung Yup Kim, Jim McVittie, Krishna Saraswat, Yoshio Nishi
33
Authors: Martin Lommel, Philipp Hönicke, Michael Kolbe, Matthias Müller, Falk Reinhardt, Pit Möbus, Eric Mankel, Burkhard Beckhoff, Bernd O. Kolbesen
Abstract:The formation of self-assembled monolayers (SAMs) by specific organic molecules with appropriate anchor groups on semiconductor surfaces may...
169
Authors: Gabriel H. Collin, Avi Shalav, Robert G. Elliman
Abstract:Silica nanowires have recently been grown via the vapor-liquid-solid growth mechanism where the vapor precursor is obtained directly from the...
133
Authors: Masayuki Wada, H. Takahashi, James Snow, Rita Vos, Thierry Conard, Paul W. Mertens, H. Shirakawa
Chapter 1: FEOL Surface Chemistry, Etching and Passivation
Abstract:Since silicon will ultimately face physical limitations, germanium and III-V materials, such as Ga, GaAs, InGaAs, are being extensively...
19