Effect of SC-1 Treatment in Thermal Wall Oxide on Nanoscale STI Gap-Filling by O3/TEOS CVD |
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| Journal | Solid State Phenomena (Volume 134) |
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| Volume | Ultra Clean Processing of Semiconductor Surfaces VIII |
| Edited by | Paul Mertens, Marc Meuris and Marc Heyns |
| Pages | 57-60 |
| DOI | 10.4028/www.scientific.net/SSP.134.57 |
| Citation | Seung Cheol Lee et al., 2007, Solid State Phenomena, 134, 57 |
| Online since | November, 2007 |
| Authors | Seung Cheol Lee, Choon Kun Ryu, Sang Wook Park, Gyu An Jin, Sang Deok Kim, Ki Hong Yang, Sang Hyon Kwak, Su Hyun Lim, Young Jun Kim, Sun Mi Park, Chul Sik Jang, Sung Ki Park |
| Keywords | Cleaning, O3/TEOS, SC-1, STI Gap-Filling |
| Abstract | The SC-1 treatment prior to the O3/TEOS CVD was a very effective method for gapfilling the nanoscale trench of the high aspect ratio by improving the adsorption of TEOS precursors onto the wall oxide. It was found that the interval duration after the SC-1 cleaning was a critical parameter for the contact angle and the gapfill performance of the O3/TEOS CVD. |
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