Paper Title:
Effect of SC-1 Treatment in Thermal Wall Oxide on Nanoscale STI Gap-Filling by O3/TEOS CVD
  Abstract

The SC-1 treatment prior to the O3/TEOS CVD was a very effective method for gapfilling the nanoscale trench of the high aspect ratio by improving the adsorption of TEOS precursors onto the wall oxide. It was found that the interval duration after the SC-1 cleaning was a critical parameter for the contact angle and the gapfill performance of the O3/TEOS CVD.

  Info
Periodical
Solid State Phenomena (Volume 134)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
57-60
DOI
10.4028/www.scientific.net/SSP.134.57
Citation
S. C. Lee, C. K. Ryu, S. W. Park, G. A. Jin, S. D. Kim, K. H. Yang, S. H. Kwak, S. H. Lim, Y. J. Kim, S. M. Park, C. S. Jang, S. K. Park, "Effect of SC-1 Treatment in Thermal Wall Oxide on Nanoscale STI Gap-Filling by O3/TEOS CVD", Solid State Phenomena, Vol. 134, pp. 57-60, 2008
Online since
November 2007
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