Paper Title:
Wafer Cleaning Using Supercritical CO2 in Semiconductor and Nanoelectronic Device Fabrication
  Abstract

  Info
Periodical
Solid State Phenomena (Volume 134)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
97-103
DOI
10.4028/www.scientific.net/SSP.134.97
Citation
K. Saga, T. Hattori, "Wafer Cleaning Using Supercritical CO2 in Semiconductor and Nanoelectronic Device Fabrication", Solid State Phenomena, Vol. 134, pp. 97-103, 2008
Online since
November 2007
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Hyo Geun Yoon, Sang Hyun Lee, Woo Jin Kim, Geun Min Choi, Young Wook Song
143
Authors: Gwiy Sang Chung, Chang Min Ohn
Abstract:This paper describes magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC thin films grown on thermally...
875
Authors: Suguru Saito, Yoshiya Hagimoto, Hayato Iwamoto, Yusuke Muraki
Abstract:Recently, plasma-less gaseous etching processes have attracted attention for their interesting etching properties. Previously, we reported on...
227
Authors: Jae Hyun Bae, Jae Mok Jung, Kwon Taek Lim
Abstract:In this work, we studied HF/scCO2 dry etching processes with various co-solvents for the purpose of reducing the residues. The effect of...
235
Authors: Heini Ritala, Mikko Tuohiniemi
Chapter 1: FEOL Surface Chemistry, Etching and Passivation
Abstract:HF vapor etching using thin Al2O3 film as etch stop material was studied. It was found that behavior of...
45