The initials results on growth and structural properties of Ni-Mn-Al full Heusler alloy thin films on silicon substrates deposited by RF magnetron sputtering is reported in this paper. Good crystallinity in the film is obtained by optimizing the sputtering parameters. The as-deposited film was post-annealed in vacuum in the temperature range between 150 °C, 250 °C and 450 °C for 60 min. It is observed that as deposited film shows nanocrystalline in nature. The film annealed at 450 °C shows L21 structure. The magnetic properties of the NiMnAl films at room temperature are measured by vibrating sample magnetometer [VSM]. It is found that the annealed samples shows clear saturating loop whereas the as prepared film is paramagnetic in nature.