To investigate the influence of stress on reactive diffusion, a remarkably clear experiment has been designed. Thin film Al/Cu/Al and Cu/Al/Cu triple layers are deposited on curved substrates of 25 nm radius and investigated by atom probe tomography. Due to the specific geometry, the excess volume of the reaction product induces compressive and dilatational stress on opposite sides of the product layer, even in the case of semi-coherent or incoherent interphase boundaries. The resulting stress gradient leads to additional driving force, which accelerates or decelerates the reaction rate in dependence on the stacking sequence of the layer material. By quantitative analysis, the induced level of stress can be quantified from the modified growth rate of the product.