Physics Mechanisms Involved in the Formation and Recrystallization of Amorphous Regions in Si through Ion Irradiation |
| Journal |
Solid State Phenomena (Volume 139) |
| Volume |
Theory, Modeling and Numerical Simulation |
| Edited by |
Veena Tikare, Graeme E. Murch, Frédéric Soisson and Jeung Ku Kang |
| Pages |
71-76 |
| DOI |
10.4028/www.scientific.net/SSP.139.71 |
| Online since |
April, 2008 |
| Authors |
Iván Santos,
Luis Alberto Marqués,
Lourdes Pelaz,
Pedro Lopez,
María Aboy
|
| Keywords |
Amorphization, Binary Collisions, Molecular Dynamics, Multiscale Modeling, Silicon |
| Abstract |
We focus this work on multi-scale modeling of the ion-beam-induced amorphization and
recrystallization in Si, although our scheme can be applied to other materials. We use molecular
dynamics to study the formation mechanisms of amorphous regions. We have observed that along
with energetic ballistic collisions that generate Frenkel pairs, low energy interactions can produce
damage through the melting and quenching of target regions. By quantifying these results, we have
developed an improved binary collision approximation model which gives a damage description
similar to molecular dynamics. We have successfully applied our model to ion and cluster
implantations. In order to define the energetic of defects in a more computationally efficient Kinetic
Monter Carlo code, we have used molecular dynamics results related to the recrystallization
behavior of local amorphous regions. The combination of all these simulation tools, molecular
dynamics (fundamental studies of damage formation and recrystallization), improved binary
collisions (including ballistic and melting-related damage) and Kinetic Monte Carlo (for efficient
defect kinetics modeling during the implantation and the subsequent annealing), allows us to model
the effect of ion mass, beam current and implant temperature on the amount and morphology of
residual defects in Si. |
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