Paper Title:
Surface Potential Difference Imaging Applied to Wet Clean Monitoring
  Abstract

The monitoring and optimization of wet clean and surface preparation processes is a major challenge in the microelectronics industry [1, 2]. Today, the main methods used in clean rooms are visual inspection by light scattering (principally applied to particle detection) and metallic contamination detection by Total-reflection X-Ray Fluorescence (TXRF). These methods, despite good sensitivity and recent progress [3, 4] are not sufficient, especially considering non-visual defects not measurable by light scattering, nor TXRF due to their chemical nature or to their size and location (TXRF is not applicable to light elements – with Z < 11 – and is typically a 1 cm resolution tool, with 1 to 2 cm edge exclusion). Non-vibrating Surface Potential Difference Imaging (SPDI), introduced in 2005 under the name of ChemetriQ® is an in-line, non-contact, non-destructive inspection technique based on the imaging of surface Work Function (WF) lateral non-uniformities [5]. Recent studies show very promising results for SPDI: high sensitivity to traces of metals on Si wafers with native oxide [6]; fast imaging capabilities of unpatterned or patterned wafers with sensitivity to chemical residues and charge [7, 8]. In this work, the ChemetriQ method is evaluated for in-line control of wet clean processes. The variation of SPDI data from various contaminants is compared to intra- and inter-wafer variations related to the cleaning and measurement conditions. Note that all wafer maps are presented with the notch oriented at 6:00.

  Info
Periodical
Solid State Phenomena (Volumes 145-146)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
109-112
DOI
10.4028/www.scientific.net/SSP.145-146.109
Citation
A. Danel, S. Sage, M.C. Roure, D. Peters, J. Hawthorne, R. Spicer, "Surface Potential Difference Imaging Applied to Wet Clean Monitoring", Solid State Phenomena, Vols. 145-146, pp. 109-112, 2009
Online since
January 2009
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Price
$32.00
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