Paper Title:
Developing a High Volume Manufacturing Wet Clean Process to Remove BF2 Implant Induced Molybdenum Contamination
  Abstract

This work details the investigation of potential problems in Complimentary BiCMOS technology, especially PNP transistors arrays. Optical examination of the wafer revealed defects in the P Buried Layer (PBL) areas of the die. Electrical testing correlated these PBL defects to PNP array current leakage. As the PBL module is completed very early on in the process, we devised a shortloop (SL) to reproduce these defects and identify the root cause of current leakage.

  Info
Periodical
Solid State Phenomena (Volumes 145-146)
Edited by
Paul Mertens, Marc Meuris and Marc Heyns
Pages
127-130
DOI
10.4028/www.scientific.net/SSP.145-146.127
Citation
A. Sehgal, H. H. Huang, J. Ramdani, J. Klatt, C. Printy, S. Ruby, T. Thibeault, "Developing a High Volume Manufacturing Wet Clean Process to Remove BF2 Implant Induced Molybdenum Contamination", Solid State Phenomena, Vols. 145-146, pp. 127-130, 2009
Online since
January 2009
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$32.00
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